MIXA80R1200VA boost chopper xpt igbt module 4/5 1/2 9 10 6/7 part number MIXA80R1200VA backside: isolated c25 ce(sat) v v 1,9 ces 120 1200 = v = v i = a features / advantages: applications: package: easy paralleling due to the positive temperature coefficient of the on-state voltage rugged xpt design (xtreme light punch through) results in: - short circuit rated for 10 sec. - very low gate charge - low emi - square rbsoa @ 3x ic thin wafer technology combined with the xpt design results in a competitive low vce(sat) sonic? diode - fast and soft reverse recovery - low operating forward voltage ac motor drives solar inverter medical equipment uninterruptible power supply air-conditioning systems welding equipment switched-mode and resonant-mode power supplies inductive heating, cookers pumps, fans v1-a-pack industry standard outline rohs compliant soldering pins for pcb mounting height: 17 mm base plate: dcb ceramic reduced weight advanced power cycling isolation voltage: v~ 3600 the data contained in this product data sheet is ex clusively intended for technically trained staff. t he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect t o his application. the specifications of our compon ents may not be considered as an assurance of compo nent characteristics. the information in the valid application- and assembly notes must be considered. should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact the sales office, which is responsible for yo u. due to technical requirements our product may conta in dangerous substances. for information on the typ es in question please contact the sales office, whi ch is responsible for you. should you intend to use the product in aviation, i n health or live endangering or life support applic ations, please notify. for any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. terms conditions of usage: ixys reserves the right to change limits, condition s and dimensions. 20151102c data according to iec 60747and per semiconductor un less otherwise specified ? 2015 ixys all rights reserved
MIXA80R1200VA -di /dt = a/s t = c v ces v 1200 collector emitter voltage collector emitter saturation voltage t = 25c collector current a 120 a c vj symbol definition ratings typ. max. min. conditions unit 84 v v ce(sat) total power dissipation 390 w collector emitter leakage current 6,5 v turn-on delay time 70 ns t reverse bias safe operating area a v ges v 20 v gem max. transient gate emitter voltage t = c c v p tot gate emitter threshold voltage rbsoa 225 30 t = c t = c vj v max. dc gate voltage i c25 i c t = 25c vj i = a; v = 15 v c ge t = 25c vj v ge(th) i ces i = ma; v = v c ge ce v = v ; v = 0 v ce ces ge i ges t = 25c vj gate emitter leakage current v = 20 v ge 2,2 2,2 5,9 5,4 ma 0,6 ma 0,2 500 g(on) total gate charge v = v; v = 15 v; i = a ce q ge c 230 nc tt t e e d(on) r d(off) f on off 40 ns 250 ns 100 ns 6,8 mj 8,3 mj current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load v = v; i = a v = 15 v; r = ? ce c ge g v = 15 v; r = ? ge g v = v cema 1200 short circuit safe operating area s scsoa 10 t = c vj v = v; v = 15 v ce ge short circuit duration t short circuit current i sc sc r = ? ; non-repetitive g 300 a r thjc thermal resistance junction to case 0,32 k/w v rrm v 1200 max. repetitive reverse voltage t = 25c vj t = 25c forward current a 135 a c 90 t = c c i f25 i f t = 25c forward voltage v 2,30 v vj 2,10 t = 125c vj v f i = a f t = 25c reverse current ma 0,3 ma vj 0,8 t = 125c vj i r r rrm t = 125c vj qi t rr rm rr 12,5 c 105 a 350 ns reverse recovery charge max. reverse recovery current reverse recovery time v = i = a; v = 0 v f f ge e rec 4 mj reverse recovery energy r r thjc thermal resistance junction to case 0,4 k/w v = v t = 25c c t = 25c vj t = c vj vj 75 6 75 75 100 100 10 10 10 600 900 1600 600 i cm 1,9 r thch thermal resistance case to heatsink k/w r thch thermal resistance case to heatsink k/w igbt diode 600 v v = v cema 1200 80 80 80 80 125 125 125 125 125 na 0,20 0,20 ixys reserves the right to change limits, condition s and dimensions. 20151102c data according to iec 60747and per semiconductor un less otherwise specified ? 2015 ixys all rights reserved
MIXA80R1200VA ratings part number (typ) yywwa date code prod. index lot no.: data matrix: typ (1-19), dc+ prod.index (20-25), fkt# (26-31) leer (33), lfd.# (33-36) i x m a 80 r 1200 va part description igbt xpt igbt gen 1 / std boost chopper v1-a-pack module = = = = current rating [a] reverse voltage [v] = = = = package t op c m d nm 2,5 mounting torque 2 t vj c 150 virtual junction temperature -40 weight g 37 symbol definition typ. max. min. conditions operation temperature unit v v t = 1 second v t = 1 minute isolation voltage mm mm 6,0 12,0 d spp/app creepage distance on surface | striking distance th rough air d spb/apb terminal to backside i rms rms current 100 a per terminal 125 -40 terminal to terminal v1-a-pack delivery mode quantity code no. ordering number marking on product ordering 50/60 hz, rms; i 1 ma isol MIXA80R1200VA 510585 blister 24 MIXA80R1200VA standard 3600 isol t stg c 125 storage temperature -40 3000 threshold voltage v m ? v 0 max r 0 max slope resistance * 1,1 17,9 1,09 9,1 equivalent circuits for simulation t = vj i v 0 r 0 igbt diode 150 c * on die level ixys reserves the right to change limits, condition s and dimensions. 20151102c data according to iec 60747and per semiconductor un less otherwise specified ? 2015 ixys all rights reserved
MIXA80R1200VA remarks / bemerkungen: 1. nominal distance mounting screws on heat sink: 52 mm / nennabstand befestigungsschrauben auf khlk?rper: 52 mm 2. general tolerance / allgemeintoleranz : din iso 2768 -t1-c 3. surface treatment of pins: tin plated (sn) in hot dip / oberfl?chenbehandlung der pins: verzinnt (sn) im tauchbad 3 8 1 2 4 5 7 9 10 6 6 52 (see 1) 5,5 25 25,75 5,5 15 12,2 1x45 0,3 11,75 0,3 0,5 *11 = = *14 *7 *14 *7 *14 *7 *14 *7 25 25,75 0,3 *11 *0 ? 0,8 * 11,75 0,3 marking on product aufdruck der typenbezeichnung 26 31,6 2 0,5 +0,2 3,6 0,5 *0 *0 1 0,2 2 +0,2 35 63 13 17 r2 max. 0,25 0,25 ? 6,1 ? 2,5 1,5 ? 2,1 4 6 4/5 1/2 9 10 6/7 outlines v1-a-pack ixys reserves the right to change limits, condition s and dimensions. 20151102c data according to iec 60747and per semiconductor un less otherwise specified ? 2015 ixys all rights reserved
MIXA80R1200VA 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 14 16 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 20 40 60 80 100 120 140 v ce [v] i c [a] q g [nc] v ge [v] 9 v 11 v 5 6 7 8 9 10 11 12 13 0 20 40 60 80 100 120 140 0 50 100 150 200 250 300 0 5 10 15 20 t vj = 25c t vj = 125c t vj = 25c t vj = 125c 13 v 8 10 12 14 16 18 20 22 24 5 6 7 8 9 10 e [mj] e off fig. 1 typ. output characteristics v ce [v] i c [a] v ge = 15 v 17 v 19 v fig. 2 typ. output characteristics i c [a] fig. 3 typ. tranfer characteristics v ge [v] fig. 4 typ. turn-on gate charge fig. 5 typ. switching energy vs. collector current e on fig. 6 typ. switching energy vs. gate resistance r g [ ] e [mj] i c [a] e on e off i c = 75 a v ce = 600 v r g = 10 v ce = 600 v v ge = 15 v t vj = 125c i c = 75 a v ce = 600 v v ge = 15 v t vj = 125c v ge = 15 v t vj = 125c igbt ixys reserves the right to change limits, condition s and dimensions. 20151102c data according to iec 60747and per semiconductor un less otherwise specified ? 2015 ixys all rights reserved
MIXA80R1200VA 1000 1200 1400 1600 1800 2000 2200 4 8 12 16 20 24 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 50 100 150 2 0 0 q rr [c] i f [a] v f [v] di f /dt [a/s] t vj = 125c t vj = 25c t vj = 125c v r = 600 v 50 a 100 a 200 a fig. 7 typ. forward current versus v f fig. 8 typ. reverse recov.charge q rr vs. di/dt 1000 1200 1400 1600 1800 2000 2200 40 60 80 100 120 140 160 i rr [a] di f /dt [a/s] t vj = 125c v r = 600 v 200 a 50 a 100 a fig. 9 typ. peak reverse current i rm vs. di/dt 1000 1200 1400 1600 1800 2000 2200 0 100 200 300 400 500 600 700 t rr [ns] di f /dt [a/s] 200 a 50 a 100 a t vj = 125c v r = 600 v fig. 10 typ. recovery time t rr versus di/dt fig. 11 typ. recovery energy e rec versus di/dt 1000 1200 1400 1600 1800 2000 2200 0 2 4 6 8 e rec [mj] di f /dt [a/s] t vj = 125c v r = 600 v 200 a 50 a 100 a 0.001 0.01 0.1 1 10 0.01 0.1 1 t p [s] z thjc [k/w] fig. 12 typ. transient thermal impedance igbt diode diode ixys reserves the right to change limits, condition s and dimensions. 20151102c data according to iec 60747and per semiconductor un less otherwise specified ? 2015 ixys all rights reserved
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